STS8235 symbol v ds v gs i dm a i d units parameter 30 4.5 18 v v 10 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) max 30v 4.5a 46 @ vgs=2.5v absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a 100 w p d c 1.25 -55 to 150 c/w t a =25 c thermal characteristics maximum power dissipation a operating junction and storage temperature range t j , t stg thermal resistance, junction-to-ambient r ja a t a =70 c s urface mount p ackage. f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. e s d p rotected. s ot 26 t op v iew s 1 d1/d2 s 2 g 1 d1/d2 g 2 1 2 3 6 5 4 g 1 d 1 s 1 g 2 d 2 s 2 36 @ vgs=4.5v t a =25 c 3.6 t a =70 c a a 0.8 product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
4 symbol min typ max units bv dss 30 v 1 i gss 10 ua v gs(th) 0.5 v 30 g fs 15 s v sd c iss 440 pf c oss 80 pf c rss 56 pf q g 10 nc 12.5 nc q gs 15.5 nc q gd 30 t d(on) ns t r ns t d(off) ns t f ns gate-drain charge v ds =15v,v gs =0v switching characteristics gate-source charge v dd =15v i d =1a v gs =4.5v r gen =10 ohm total gate charge rise time turn-off delay time v ds =15v,i d =4.5a,v gs =4.5v fall time turn-on delay time m ohm v gs =4.5v , i d =4.5a v ds =5v , i d =4.5a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 10v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 1.5 v gs =2.5v , i d =4a 36 46 m ohm c f=1.0mhz c v ds =15v,i d =4.5a, v gs =4.5v drain-source diode characteristics and maximum ratings b v gs =0v,i s =1.25a 0.78 1.2 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. _ _ nc v ds =15v,i d =4.5a,v gs =2.5v _ 36 6.7 4.6 1.5 2.2 0.7 i s 1.25 a maximum continuous drain-source diode forward current STS8235 product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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